Research on mobility variance caused by TSV-induced mechanical stress in 3D-IC

Author

Yangyang Zhao ; Hailong You ; Ran Cui ; Yu Zhang ; Xinzhang Jia

Author_Institution

Sch. of Microelectron., Xidian Univ., Xi´an, China

fYear

2014

fDate

12-15 Aug. 2014

Firstpage

1186

Lastpage

1189

Abstract

Due to mismatch in the coefficients of thermal expansion of silicon and copper, mechanical stresses in surrounding silicon are induced near TSV in 3D ICs. In this paper, the mobility variance of substrate material caused by TSV-induced stress is researched. Firstly the semi-analytical model for TSV-induced stress distribution is introduced. An analytical model for TSV-induced stress distribution is then developed base on the semi-analytical model with curve fitting method. At last, a mobility variance model is obtained combining with piezoresistive effect theory. The influence of TSV diameter, distance to TSV, crystal orientation, carrier type, and the difference of CTEs on mobility variance are analyzed based on the mobility variance model.

Keywords

carrier mobility; copper; crystal orientation; curve fitting; mechanical properties; piezoresistive devices; silicon; stress analysis; thermal expansion; three-dimensional integrated circuits; 3D-IC; CTE difference; Cu; Si; TSV diameter; TSV distance; TSV- induced mechanical stress distribution; carrier type; crystal orientation; curve fitting method; mobility variance model; piezoresistive effect theory; semianalytical model; substrate material; thermal expansion mismatch coefficients; Analytical models; Integrated circuit modeling; Silicon; Stress; Thermal stresses; Three-dimensional displays; Through-silicon vias; 3D IC; TSV-induced stress; mobility variance model; piezoresistive effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology (ICEPT), 2014 15th International Conference on

Conference_Location

Chengdu

Type

conf

DOI

10.1109/ICEPT.2014.6922855

Filename

6922855