DocumentCode
1188841
Title
Total dose effects on bipolar integrated circuits: characterization of the saturation region
Author
Boch, J. ; Saigné, F. ; Ducret, S. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Iacconi, P. ; Dusseau, L.
Author_Institution
Univ. de Nice Sophia-Antipolis, France
Volume
51
Issue
6
fYear
2004
Firstpage
3225
Lastpage
3230
Abstract
The total-dose response of bipolar microcircuits is investigated. A recovery of the degradation is observed for high total dose in the saturation region. The circuit response in this region is studied based on room temperature annealing. The role of the electric field is studied and the results are discussed in terms of hardness assurance.
Keywords
annealing; bipolar integrated circuits; dosimetry; radiation hardening (electronics); semiconductor device measurement; 293 to 298 K; bipolar integrated circuits; bipolar microcircuits; bipolar transistor; device characterization; electric field; hardness assurance; linear microcircuit; room temperature annealing; saturation region; total dose effects; Annealing; Bipolar integrated circuits; Degradation; Ionizing radiation; Performance evaluation; Semiconductor device testing; Shape; Space missions; Temperature; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2004.839143
Filename
1369474
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