Hydrodynamic simulation of semiconductor devices operating at low temperature

Author

Leone, Alberto ; Gnudi, Antonio ; Baccarani, Giorgio

Author_Institution

Dipartimento di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy

Volume

13

Issue

11

fYear

1994

fDate

11/1/1994 12:00:00 AM

Firstpage

1400

Lastpage

1408

Abstract

The problems related to the hydrodynamic simulation of semiconductor devices operating at liquid nitrogen temperature are investigated, with emphasis on the numerical aspects. A discretization strategy is proposed that allows one to incorporate in a conventional hydrodynamic program typical low-temperature effects, such as Fermi statistics and incomplete ionization, as well as proper boundary conditions. The suggested technique has been implemented in the hydrodynamic version of the program HFIELDS, and it has been tested by means of the simulation of a submicron n-channel MOSFET

Keywords

cryogenics; digital simulation; electronic engineering computing; semiconductor device models; Fermi statistics; HFIELDS; boundary conditions; discretization strategy; hydrodynamic simulation; incomplete ionization; liquid nitrogen temperature; low temperature operation; semiconductor devices; submicron n-channel MOSFET; Charge carrier processes; Electric potential; Electrons; Hydrodynamics; Ionization; MOSFET circuits; Semiconductor devices; Statistics; Temperature; Thermal conductivity;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.329268

Filename

329268