Analysis of proton/neutron SEU sensitivity of commercial SRAMs-application to the terrestrial environment test method

Author

Baggio, J. ; Ferlet-Cavrois, V. ; Duarte, H. ; Flament, O.

Author_Institution

CEA DAM-Ile de France, Bruyeres-le-Chatel, France

Volume

51

Issue

6

fYear

2004

Firstpage

3420

Lastpage

3426

Abstract

Results of WNR continuous spectrum irradiations are compared to mono-energetic proton and neutron data according to the JEDEC-JESD89 test procedure. A good correlation between these two methods is found particularly when 500 MeV proton cross-section is used instead of the one at 150 MeV. The increased contribution of the low energy part of the spectrum for modern devices is also discussed. Finally, the influence of front side and back side irradiations is studied at different energies and for several devices from 0.8 μm to 0.18 μm technologies.

Keywords

SRAM chips; neutron effects; proton effects; 0.8 to 0.18 micron; JEDEC-JESD89 test procedure; WNR continuous spectrum irradiations; back side irradiation; bulk technologies; commercial SRAMs; front side irradiation; low energy part; modern devices; monoenergetic neutron; monoenergetic proton; neutron effects; proton cross-section; proton effects; proton/neutron SEU sensitivity; single-event upset; soft error rate; terrestrial environment test method; Energy measurement; Error analysis; Life estimation; Manufacturing; Neurons; Neutrons; Particle beams; Proton effects; Single event upset; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.839135

Filename

1369505