Comparison of S-parameters based and non-linear model based power amplifier designing techniques

Author

Qasim, M. ; Hayat, K. ; Azam, Saad ; Mehmood, T. ; Imran, Muhammad ; Zafrullah, M.

Author_Institution

Univ. of Eng. & Technol., Taxila, Pakistan

fYear

2014

fDate

14-18 Jan. 2014

Firstpage

403

Lastpage

406

Abstract

This paper presents the designing and implementation of Si based GaN HEMTclass-AB boaster amplifier using S-parameters (S2P file) as well as its non-linear model at 2.3 GHz. The aim of this workis topropose an alternative designing approach using S-parameters (S2P file) in the absence of its nonlinear model. The fabricated booster amplifier give 34.5dBm output power, 15 dB gain and 50.27 % Power added efficiency (PAE). The simulated and measured results are very much comparable in both cases.

Keywords

III-V semiconductors; S-parameters; UHF power amplifiers; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; GaN; HEMTclass-AB boaster amplifier; S-parameters; frequency 2.3 GHz; nonlinear model; power added efficiency; power amplifier designing techniques; Gain; Gain measurement; Microwave amplifiers; Microwave circuits; Power amplifiers; Scattering parameters; Stability analysis; GaN HEMT; Power amplifier; SiC MESFET; Wideband gap (WBG); power added efficiency;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Sciences and Technology (IBCAST), 2014 11th International Bhurban Conference on

Conference_Location

Islamabad

Type

conf

DOI

10.1109/IBCAST.2014.6778177

Filename

6778177