DocumentCode
1189620
Title
Proton, neutron, and gamma degradation of optocouplers
Author
Gorelick, Jerry L. ; Ladbury, Raymond
Author_Institution
Boeing Satellite Syst., Los Angeles, CA, USA
Volume
51
Issue
6
fYear
2004
Firstpage
3730
Lastpage
3735
Abstract
Optocouplers from two different suppliers were subjected to proton, neutron, and gamma irradiations. A simple transistor model was used to compare degradation in current transfer ratio (CTR) from the three types of radiation. The model was used to determine how accurately proton damage can be predicted from separate neutron and gamma exposures.
Keywords
gamma-ray effects; neutron effects; opto-isolators; proton effects; transistors; combined ionization; current transfer ratio; displacement damage; gamma degradation; gamma exposures; gamma irradiation; neutron degradation; neutron exposures; neutron irradiation; optocouplers; proton damage; proton degradation; proton irradiation; radiation effects; transistor model; Circuits; Degradation; Ionization; Light emitting diodes; Neutrons; Photodiodes; Predictive models; Protons; Radiation effects; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2004.839249
Filename
1369550
Link To Document