Multibit MRAM using a pair of memory cells

Magnetic random access memory (MRAM) is one of the most promising candidates to provide energy-efficient and nonvolatile memory. We present a new MRAM design using a pair of cells where each cell can store two bits of information. The pair cells have a parallelogram shape to induce broken-shape magnetic anisotropy along the short axis of the cell. One important advantage of the pair cells is that they can share the same word- and bit-lines intersection in the MRAM architecture. This means that the number of electrical current lines can be reduced and lead to higher recording density. Such design is successfully demonstrated using finite-element micromagnetic simulation.