Characteristics of a new isolated p-well structure using thin epitaxy over the buried layer and trench isolation

Author

Okazaki, Yukio ; Kobayashi, Toshi ; Konaka, Shinsuke ; Morimoto, Takashi ; Takahashi, Mitsutoshi ; Imai, Kazuo ; Kado, Yuichi

Author_Institution

NTT Corp., Kanagawa, Japan

Volume

39

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2758

Lastpage

2764

Abstract

An isolated p-well structure for deep-submicrometer BiCMOS LSIs is proposed. The structure consists of a retrograde p-well in an n-type thin epitaxial layer over an n⁺ buried layer, and trench isolation. Latchup characteristics in this CMOS structure and breakdown characteristics of the shallow p-well are studied on test devices. Excellent latchup immunity and sufficient voltage tolerance are obtained with a thin 1-μm epitaxial layer. A CMOS 1/8 dynamic-type frequency divider using this well structure functions properly up to 3.2 GHz at a 2-V supply voltage

Keywords

BiCMOS integrated circuits; electric breakdown of solids; integrated circuit technology; large scale integration; 2 V; 3.2 GHz; BiCMOS; CMOS structure; breakdown characteristics; buried layer; deep submicron LSI; dynamic-type; frequency divider; isolated p-well structure; latchup immunity; n-type thin epitaxial layer; n⁺ buried layer; retrograde p-well; shallow p-well; trench isolation; voltage tolerance; BiCMOS integrated circuits; Breakdown voltage; CMOS logic circuits; CMOS technology; Circuit testing; Electric breakdown; Epitaxial growth; Epitaxial layers; Fabrication; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.168730

Filename

168730