DocumentCode
1190051
Title
Effect of spin-orbit split-off bands on GaInP/AlGaInP strained quantum well lasers
Author
Kamiyama, Satoshi ; Uenoyama, Takeshi ; Mannoh, Masaya ; Ohnaka, Kiyoshi
Author_Institution
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Volume
6
Issue
10
fYear
1994
Firstpage
1173
Lastpage
1175
Abstract
We theoretically analyzed the effect of the spin-orbit split-off band on GaInP/AlGaInP strained quantum well lasers using 6/spl times/6 Luttinger-Kohn Hamiltonian. Because of the small spin splitting energy of GaInP, we show that the spin-orbit split-off subbands strongly couple with heavy and light hole subbands, and linear gain properties are greatly different from those without the effect of spin-orbit split-off bands. The unstrained quantum well structure is most influenced by the spin-orbit split-off bands, and laser characteristics such as the differential gain and threshold current are degraded. The compressive-strained quantum well has the lowest threshold current, and the tensile-strained quantum well has largest differential gain, which is improved by the effect of the spin-orbit split-off bands.<>
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser theory; semiconductor lasers; spin-orbit interactions; 6/spl times/6 Luttinger-Kohn Hamiltonian; GaInP-AlGaInP; GaInP/AlGaInP strained quantum well lasers; compressive-strained quantum well; differential gain; laser characteristics; light hole subbands; linear gain properties; lowest threshold current; small spin splitting energy; spin-orbit split-off bands; spin-orbit split-off subbands; strongly couple; tensile-strained quantum well; threshold current; Capacitive sensors; Gallium arsenide; Laser theory; Optical coupling; Orbital calculations; Photonic band gap; Quantum mechanics; Quantum well lasers; Temperature; Threshold current;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.329629
Filename
329629
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