DocumentCode
1190440
Title
Magnetic and transport properties of epitaxial Co2MnSi films
Author
Wang, W.H. ; Ren, X.B. ; Wu, G.H. ; Przybylski, M. ; Barthel, J. ; Kirschne, J.
Author_Institution
Nat. Inst. for Mater. Sci., Ibaraki, Japan
Volume
41
Issue
10
fYear
2005
Firstpage
2805
Lastpage
2807
Abstract
We report on magnetic and magnetotransport properties of single-crystalline Co2MnSi films grown by using conventional pulsed laser deposition (PLD) method on moderately heated semiconductor GaAs(001) substrates. The films exhibit the expected high Curie temperature and a strong in-plane uniaxial magnetic anisotropy with the easy axis of magnetization along the [1-10] direction. A saturation magnetization of 950 emu/cm3 was measured at 5 K. The temperature dependence of the resistivity shows metallic behavior down to low temperatures. At 5 K, a rather large negative magnetoresistance (MR) of 1.26% has also been observed.
Keywords
Curie temperature; cobalt alloys; gallium arsenide; magnetic anisotropy; magnetic epitaxial layers; magnetoresistance; manganese alloys; pulsed laser deposition; semimagnetic semiconductors; silicon alloys; 5 K; Co2MnSi; Curie temperature; GaAs; Heusler alloys; PLD; epitaxial layer; magnetic properties; magnetization; magnetoresistance; magnetotransport properties; moderately heated semiconductor; pulsed laser deposition; resistivity; transport properties; uniaxial magnetic anisotropy; Magnetic anisotropy; Magnetic films; Magnetic properties; Magnetic semiconductors; Optical pulses; Perpendicular magnetic anisotropy; Pulsed laser deposition; Saturation magnetization; Semiconductor films; Temperature dependence; Half metal; Heusler alloys; magnetic properties;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2005.854833
Filename
1519128
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