DocumentCode
1190508
Title
In0.52Al0.48As/In0.53Ga0.47 As MSM photodetectors and HEMT´s grown by MOCVD on GaAs substrates
Author
Hong, W.P. ; Bhat, Raj ; Nguyen, C. ; Koza, M. ; Caneau, C. ; Chang, G.K.
Author_Institution
Bellcore, Red Bank, NJ, USA
Volume
39
Issue
12
fYear
1992
fDate
12/1/1992 12:00:00 AM
Firstpage
2817
Lastpage
2818
Abstract
The authors report the first demonstration of In0.52Al 0.48As/In0.53Ga0.47As metal-semiconductor-metal (MSM) photodetectors and high-electron-mobility transistors (HEMTs) grown on GaAs substrates by organometallic chemical vapor deposition. Both photodetectors and transistors showed no degradation in performance compared to devices simultaneously grown on InP substrates. The photodetectors exhibited a responsivity of 0.45 A/W and leakage current of 10 to 50 nA. The HEMTs with a gate length of 1.0 μm showed a transconductance as high as 250 mS/mm, and f T and f max of 25 and 70 GHz, respectively
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; leakage currents; metal-semiconductor-metal structures; photodetectors; vapour phase epitaxial growth; 1 micron; 10 to 50 nA; 25 GHz; 250 mS; 70 GHz; GaAs substrates; HEMTs; In0.52Al0.48As-In0.53Ga0.47 As; MOCVD; MSM photodetectors; high-electron-mobility transistors; leakage current; metal-semiconductor-metal; organometallic chemical vapor deposition; Buffer layers; Fingers; Gallium arsenide; Gold; HEMTs; Indium phosphide; MOCVD; Optical films; Photodetectors; Schottky barriers;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.168735
Filename
168735
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