• DocumentCode
    1191809
  • Title

    Picometre displacement tracking of an optical beam in a silicon Schottky barrier sensor

  • Author

    O´Connor, S.D.

  • Author_Institution
    Div. of Chem., California Inst. of Technol., Pasadena, CA
  • Volume
    30
  • Issue
    22
  • fYear
    1994
  • fDate
    10/27/1994 12:00:00 AM
  • Firstpage
    1844
  • Lastpage
    1846
  • Abstract
    An Ni-Si-Ni Schottky barrier sensor is used to sense 0.032 nm (0.064 nm peak-to-peak, 0.023 nm RMS) displacement of an optical beam incident on the sensor. This spatial resolution is more than two orders of magnitude better than any previously reported with a simple solid-state device and approaches interferometric levels
  • Keywords
    Schottky-barrier diodes; displacement measurement; elemental semiconductors; photodetectors; photodiodes; silicon; 0.032 nm; MSM photodiode; Ni-Si-Ni; optical beam; picometre displacement tracking; silicon Schottky barrier sensor; solid-state device; spatial resolution;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941246
  • Filename
    329978