DocumentCode
1191809
Title
Picometre displacement tracking of an optical beam in a silicon Schottky barrier sensor
Author
O´Connor, S.D.
Author_Institution
Div. of Chem., California Inst. of Technol., Pasadena, CA
Volume
30
Issue
22
fYear
1994
fDate
10/27/1994 12:00:00 AM
Firstpage
1844
Lastpage
1846
Abstract
An Ni-Si-Ni Schottky barrier sensor is used to sense 0.032 nm (0.064 nm peak-to-peak, 0.023 nm RMS) displacement of an optical beam incident on the sensor. This spatial resolution is more than two orders of magnitude better than any previously reported with a simple solid-state device and approaches interferometric levels
Keywords
Schottky-barrier diodes; displacement measurement; elemental semiconductors; photodetectors; photodiodes; silicon; 0.032 nm; MSM photodiode; Ni-Si-Ni; optical beam; picometre displacement tracking; silicon Schottky barrier sensor; solid-state device; spatial resolution;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941246
Filename
329978
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