• DocumentCode
    1192214
  • Title

    Negative differential resistance of GaAs/AlxGa1-xAs multiquantum well structures under high power photoexcitation: structure optimisation for an oscillator

  • Author

    Goswami, Suparna ; Davis, Lisa ; Hong, Seong-Kwan ; Singh, Jaskirat ; Bhattacharya, P.K. ; Haddad, G.I.

  • Author_Institution
    Michigan Univ., Ann Arbor, MI, USA
  • Volume
    28
  • Issue
    10
  • fYear
    1992
  • fDate
    5/7/1992 12:00:00 AM
  • Firstpage
    915
  • Lastpage
    916
  • Abstract
    A study is presented of the photocurrent behaviour of p-i-n diodes having GaAs/AlxGa1-xAs MQW absorption regions for varying incident power, incident wavelength and barrier height, given by the Al fraction x. Optimum results for applications in high power oscillators are expected to be obtained for 0.10.15Ga0.85As barriers.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; negative resistance; p-i-n diodes; photoconductivity; photoelectric devices; semiconductor quantum wells; GaAs-Al 0.15Ga 0.85As; MQW absorption regions; NDR; barrier height; high power oscillators; high power photoexcitation; incident power; incident wavelength; multiquantum well structures; negative differential resistance; optically controlled oscillators; p-i-n diodes; performance characteristics; photocurrent behaviour; structure optimisation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920580
  • Filename
    137187
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1192214