• DocumentCode
    1192311
  • Title

    Normal incidence infra-red absorption from intersub-band transitions in p-type GaInAs/AlInAs quantum wells

  • Author

    Katz, Justin ; Zhang, Ye ; Wang, W.I.

  • Author_Institution
    Columbia Univ., New York, NY, USA
  • Volume
    28
  • Issue
    10
  • fYear
    1992
  • fDate
    5/7/1992 12:00:00 AM
  • Firstpage
    932
  • Lastpage
    934
  • Abstract
    Infra-red intersub-band absorption measurements were performed on p-type Ga0.47In0.53As/Al0.48In0.52As multiquantum wells using normally incident radiation. Several strong intersub-band absorption peaks were observed in the wavelength range 6-12 mu m. The transition from the impurity bound state to the extended state was observed for the first time.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; semiconductor quantum wells; 6 to 12 micron; Ga 0.47In 0.53As-Al 0.48In 0.52As; IR absorption; extended state; impurity bound state; intersub-band absorption peaks; intersub-band transitions; multiquantum wells; normally incident radiation; p-type quantum wells; semiconductors; transition; wavelength range;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920590
  • Filename
    137197
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1192311