A Pulsed GaAs Laser System for Semiconductor Carrier Lifetime Measurements

An electronic system is described for controlling a semiconductor laser, which is convenient for measuring semiconductor carrier lifetimes of 500 ns or greater by the photoconductive decay method with the laser providing the sample illumination. Particular attention is given to the circuit of the power pulse generator, which was designed to operate the laser above threshold and to provide a means of controlling the output intensity of the laser radiation.