Crystal SiGeC far infrared sensor with temperature isolation improvement structure

Author

Hsieh, Ming-Chun ; Fang, Yean-Kuen ; Wu, Pei-Ming ; Wang, Wen-De

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

39

Issue

8

fYear

2003

fDate

4/17/2003 12:00:00 AM

Firstpage

656

Lastpage

658

Abstract

A novel crystal SiGeC far infrared (FIR) sensor based on the change of resistance in a thermistor has been fabricated and developed. The developed sensor was prepared using MEMS technology to achieve a better thermal isolation structure. The thermistor in the FIR detector is made of Si_0.68Ge_0.31C_0.01 thin films for its large activation energy and the temperature coefficient. Finite element method package ANSYS was employed to analyse the thermal isolation in the FIR detector. Responsivity, thermal conductance and thermal time constant were investigated and it was found that the thermal isolation improved structure possesses a much superior performance.

Keywords

finite element analysis; germanium compounds; infrared detectors; micromachining; semiconductor materials; semiconductor thin films; silicon compounds; temperature distribution; thermal analysis; thermal conductivity; thermal stability; thermistors; thin film devices; ANSYS; MEMS fabrication technology; Si_0.68Ge_0.31C_0.01; SiGeC thin films; activation energy; crystal SiGeC FIR sensor; far infrared sensor; finite element method package; responsivity; temperature coefficient; thermal conductance; thermal isolation structure; thermal time constant; thermistor resistance change;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20030442

Filename

1197984