MOVPE-grown GaInNAs VCSELs at 1.3 μm with conventional mirror design approach

Author

Vukusic, J. ; Modh, P. ; Larsson, A. ; Hammar, M. ; Mogg, S. ; Christiansson, U. ; Oscarsson, V. ; Ödling, E. ; Malmquist, J. ; Ghisoni, M. ; Gong, P. ; Griffiths, E. ; Joel, A.

Author_Institution

Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

39

Issue

8

fYear

2003

fDate

4/17/2003 12:00:00 AM

Firstpage

662

Lastpage

664

Abstract

1.3 μm oxide confined GaInNAs VCSELs designed using the same design philosophy used for standard 850 nm VCSELs is presented. The VCSELs have doped mirrors, with graded and highly doped interfaces, and are fabricated using production-friendly procedures. Multimode VCSELs (11 μm oxide aperture) with an emission wavelength of 1287 nm have a threshold current of 3 mA and produce 1 mW of output power at 20°C. The maximum operating temperature is 95°C. Emission at 1303 nm with 1 mW of output power and a threshold current of 7 mA has been observed from VCSELs with a larger detuning between the gain peak and the cavity resonance.

Keywords

III-V semiconductors; MOCVD; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical communication equipment; optical fabrication; quantum well lasers; surface emitting lasers; vapour phase epitaxial growth; 1 mW; 1.3 micron; 11 micron; 1287 nm; 1303 nm; 20 to 95 C; 3 mA; 7 mA; GaInNAs; GaInNAs QWs; GaInNAs quantum wells; MOVPE-grown GaInNAs; conventional mirror design approach; distributed Bragg reflector; doped mirrors; multimode VCSELs; n-type DBR; oxide confined GaInNAs VCSELs; p-type DBR; surface emitting laser; vertical cavity SEL;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20030450

Filename

1197988