Applications of single-wafer thermal processing to 0.15-μm high-density MROM

Author

Hsu, Shu-Ya ; Wang, Tzu-Yu ; Shih, Hsueh-Hao ; Chen, Kuang-Chao ; Hwang, Yaw-Lin ; Hsueh, Cheng-Chen ; Chung, Henry ; Pan, Sam ; Lu, Chih-Yuan

Author_Institution

Si Lab., Macronix Int. Co. Ltd., Hsinchu, Taiwan

Volume

16

Issue

2

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

147

Lastpage

154

Abstract

Feasibility of single-wafer rapid-thermal process as an alternative to the conventional batch-type furnace process is evaluated on a 0.15-μm 128-Mb mask read only memory (MROM) product. Excellent gate oxide integrity and device characteristics are achieved with a single-wafer rapid-thermal process. Superior yield and product reliability by using single-wafer process tool have also been achieved. Shortened process cycle time and better thermal process uniformity by using single-wafer rapid-thermal processing are demonstrated.

Keywords

VLSI; integrated circuit manufacture; integrated circuit reliability; integrated memory circuits; rapid thermal processing; read-only storage; 0.15 micron; 128 Mbit; device characteristics; gate oxide integrity; high-density MROM; mask ROM; mask read only memory; process cycle time reduction; product reliability; single-wafer RTP; single-wafer rapid thermal processing; thermal process uniformity; yield; Costs; Fabrication; Furnaces; Manufacturing processes; Oxidation; Production; Rapid thermal processing; Read only memory; Substrates; Temperature distribution;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2003.810938

Filename

1198021