A test structure for spectrum analysis of hot-carrier-induced photoemission from MOSFETs

Author

Matsuda, Toshihiro ; Ohzone, Takashi ; Odanaka, Shinji ; Yamashita, Kyoji ; Koike, Norio ; Tatsuuma, Ken-ichiro

Author_Institution

Dept. of Electron. & Informatics, Toyama Prefectural Univ., Japan

Volume

16

Issue

2

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

233

Lastpage

238

Abstract

Hot-carrier-induced photoemission of subquarter-micron n-MOSFETs is analyzed using a specially designed test structure, which has a wide channel width of 2.0 mm for sufficient photoemission intensity. Since the test structure consists of parallel-connected unit MOSFETs and photoemission images are uniform, it can be estimated that the measured spectra are the same as those from unit MOSFETs. The relation between photon counts and photon energy suggests that photon energy has a Boltzmann distribution, exp(-hν/kT_e). The electron temperature T_e calculated from the photon emission spectrum takes a minimum value at the channel length of 0.23 μm. If T_e is related to device reliability, it suggests the possibility that the device structure optimized for a certain channel length may not be optimum for other channel length devices.

Keywords

MOSFET; hot carriers; photoelectron spectroscopy; semiconductor device reliability; semiconductor device testing; spectral analysis; 0.23 micron; 2.0 mm; Boltzmann distribution; MOSFETs; channel length; channel width; device reliability; electron temperature; hot-carrier-induced photoemission; parallel-connected unit MOSFETs; photoemission images; photoemission intensity; photon counts; photon energy; spectrum analysis; subquarter-micron n-MOSFETs; test structure; Charge coupled devices; Hot carriers; MOSFET circuits; Optical filters; Optical microscopy; Optical variables control; Photoelectricity; Radiative recombination; Spontaneous emission; Testing;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2003.811585

Filename

1198034