Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs

The effect of shallow trench isolation mechanical stress on MOSFET dopant diffusion has become significant, and affects device behavior for sub-100-nm technologies. This paper presents a stress-dependent dopant diffusion model and demonstrates its capability to reflect experimental results for a state-of-the-art logic CMOS technology. The proposed stress-dependent dopant diffusion model is shown to successfully reproduce device characteristics covering a wide range of active area sizes, gate lengths, and device operating conditions.