• DocumentCode
    1195109
  • Title

    STM control of noninteger residual charge Q0 on the central electrode of a double-tunnel junction

  • Author

    Rong, Zhao Yan ; Chang, Alejandro ; Cohen, Lesley F. ; Wolf, E.L.

  • Author_Institution
    Dept. of Phys., Polytech. Univ., Brooklyn, NY, USA
  • Volume
    28
  • Issue
    1
  • fYear
    1992
  • fDate
    1/1/1992 12:00:00 AM
  • Firstpage
    67
  • Lastpage
    70
  • Abstract
    In a voltage-biased mesoscopic double-tunnel junction, the Coulomb threshold VC is an e-periodic function of Q 0, the charge on the inner electrode. In the STM work described here, a large Au tip images 100-Å Ag particles deposited on a cleaved BSCCO crystal substrate. Stable double junctions between the tip, the imaged particle, and the substrate are identified by Coulomb staircase I(V)´s. The control of Q 0 is demonstrated by the variation of tip-particle spacing. The parameterization of such results permits a discussion of Q 0 variation mechanisms
  • Keywords
    bismuth compounds; calcium compounds; electric charge; high-temperature superconductors; quantum interference phenomena; scanning tunnelling microscopy; silver; strontium compounds; superconducting junction devices; superconductive tunnelling; 100 angstroms; Ag-Bi2Sr2CaCu2O8; Au tip; Bi2Sr2CaCu2O8 substrate; Coulomb staircase; Coulomb threshold; STM control; central electrode; cleaved BSCCO crystal substrate; e-periodic function; noninteger residual charge; parameterization; scanning tunnelling microscope; voltage-biased mesoscopic double-tunnel junction; Bismuth compounds; Centralized control; Crystals; Electrodes; Gold; Helium; Silver; Substrates; Surface topography; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.119817
  • Filename
    119817