DocumentCode
1195109
Title
STM control of noninteger residual charge Q 0 on the central electrode of a double-tunnel junction
Author
Rong, Zhao Yan ; Chang, Alejandro ; Cohen, Lesley F. ; Wolf, E.L.
Author_Institution
Dept. of Phys., Polytech. Univ., Brooklyn, NY, USA
Volume
28
Issue
1
fYear
1992
fDate
1/1/1992 12:00:00 AM
Firstpage
67
Lastpage
70
Abstract
In a voltage-biased mesoscopic double-tunnel junction, the Coulomb threshold V C is an e-periodic function of Q 0, the charge on the inner electrode. In the STM work described here, a large Au tip images 100-Å Ag particles deposited on a cleaved BSCCO crystal substrate. Stable double junctions between the tip, the imaged particle, and the substrate are identified by Coulomb staircase I (V )´s. The control of Q 0 is demonstrated by the variation of tip-particle spacing. The parameterization of such results permits a discussion of Q 0 variation mechanisms
Keywords
bismuth compounds; calcium compounds; electric charge; high-temperature superconductors; quantum interference phenomena; scanning tunnelling microscopy; silver; strontium compounds; superconducting junction devices; superconductive tunnelling; 100 angstroms; Ag-Bi2Sr2CaCu2O8; Au tip; Bi2Sr2CaCu2O8 substrate; Coulomb staircase; Coulomb threshold; STM control; central electrode; cleaved BSCCO crystal substrate; e-periodic function; noninteger residual charge; parameterization; scanning tunnelling microscope; voltage-biased mesoscopic double-tunnel junction; Bismuth compounds; Centralized control; Crystals; Electrodes; Gold; Helium; Silver; Substrates; Surface topography; Voltage control;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.119817
Filename
119817
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