Modeling of planar varactor frequency multiplier devices with blocking barriers

Author

Lieneweg, Udo ; Tolmunen, T.J. ; Frerking, Margaret A. ; Maserjian, Joseph

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

40

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

839

Lastpage

845

Abstract

Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. The roles and and limitations of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) gave moderate efficiency but a broad range of power generation, whereas the devices with doped drift regions (BNN) have high efficiency in a narrower power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO₂-Si and AlAs-GaAs and means for increasing the power of BNN structures are considered

Keywords

equivalent circuits; frequency multipliers; semiconductor device models; solid-state microwave devices; varactors; AlAs-GaAs; SiO₂-Si; blocking barriers; broad range; doped drift regions; electron velocity saturation; frequency multiplier devices; frequency triplers; high efficiency; narrower power window; planar varactor; power generation; symmetrical C-V curves; undoped drift regions; Electrons; Etching; Frequency; Gallium arsenide; Laboratories; Propulsion; Schottky diodes; Space technology; Submillimeter wave technology; Varactors;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.137388

Filename

137388