• DocumentCode
    1196326
  • Title

    Monte Carlo simulation of gain compression effects in GRINSCH quantum well laser structures

  • Author

    Lam, Yeeloy ; Singh, Jasprit

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
  • Volume
    30
  • Issue
    11
  • fYear
    1994
  • fDate
    11/1/1994 12:00:00 AM
  • Firstpage
    2435
  • Lastpage
    2442
  • Abstract
    Gain compression is widely acknowledged to be a serious limitation to the ultimate modulation bandwidth of a semiconductor laser. We have developed a numerical technique to study the gain compression effects in graded-index separate confinement heterostructure (GRINSCH) quantum well laser structures, This technique is based on the combination of the Monte Carlo simulation of the carrier dynamics in the device while under intense stimulated photon emission, and the calculation of the optical gain using a 4×4 k·p Hamiltonian. From the simulated results, we calculated a gain compression coefficient ε=1.1×10-17 cm3 for a linearly graded quantum well laser structure having a 50 Å In0.2Ga0.8As well. We find good agreement between our results and published experiments. We have also demonstrated that our calculation method is capable of simulating the gain dynamics in the laser structure, such as those studied with femtosecond pump-probe experimental techniques
  • Keywords
    III-V semiconductors; Monte Carlo methods; carrier mobility; gallium arsenide; indium compounds; laser theory; optical modulation; quantum well lasers; simulation; stimulated emission; 4×4 k·p Hamiltonian; GRINSCH quantum well laser structures; In0.2Ga0.8As; In0.2Ga0.8As well; Monte Carlo simulation; carrier dynamics; femtosecond pump-probe experimental techniques; gain compression coefficient; gain compression effects; graded-index separate confinement heterostructure; intense stimulated photon emission; linearly graded quantum well laser structure; modulation bandwidth; numerical technique; optical gain; semiconductor laser; Bandwidth; Carrier confinement; Optical devices; Optical pumping; Potential well; Pump lasers; Quantum well lasers; Semiconductor lasers; Stimulated emission; Ultrafast optics;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.333681
  • Filename
    333681