DocumentCode
1196326
Title
Monte Carlo simulation of gain compression effects in GRINSCH quantum well laser structures
Author
Lam, Yeeloy ; Singh, Jasprit
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
Volume
30
Issue
11
fYear
1994
fDate
11/1/1994 12:00:00 AM
Firstpage
2435
Lastpage
2442
Abstract
Gain compression is widely acknowledged to be a serious limitation to the ultimate modulation bandwidth of a semiconductor laser. We have developed a numerical technique to study the gain compression effects in graded-index separate confinement heterostructure (GRINSCH) quantum well laser structures, This technique is based on the combination of the Monte Carlo simulation of the carrier dynamics in the device while under intense stimulated photon emission, and the calculation of the optical gain using a 4×4 k·p Hamiltonian. From the simulated results, we calculated a gain compression coefficient ε=1.1×10-17 cm3 for a linearly graded quantum well laser structure having a 50 Å In0.2Ga0.8As well. We find good agreement between our results and published experiments. We have also demonstrated that our calculation method is capable of simulating the gain dynamics in the laser structure, such as those studied with femtosecond pump-probe experimental techniques
Keywords
III-V semiconductors; Monte Carlo methods; carrier mobility; gallium arsenide; indium compounds; laser theory; optical modulation; quantum well lasers; simulation; stimulated emission; 4×4 k·p Hamiltonian; GRINSCH quantum well laser structures; In0.2Ga0.8As; In0.2Ga0.8As well; Monte Carlo simulation; carrier dynamics; femtosecond pump-probe experimental techniques; gain compression coefficient; gain compression effects; graded-index separate confinement heterostructure; intense stimulated photon emission; linearly graded quantum well laser structure; modulation bandwidth; numerical technique; optical gain; semiconductor laser; Bandwidth; Carrier confinement; Optical devices; Optical pumping; Potential well; Pump lasers; Quantum well lasers; Semiconductor lasers; Stimulated emission; Ultrafast optics;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.333681
Filename
333681
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