• DocumentCode
    1199024
  • Title

    Bias Considerations in Transistor Circuit Design

  • Author

    Ghandhi, Sorab K.

  • Volume
    4
  • Issue
    3
  • fYear
    1957
  • fDate
    9/1/1957 12:00:00 AM
  • Firstpage
    194
  • Lastpage
    202
  • Abstract
    It is well known that the operating point of a transistor has a tendency to shift with temperature. An analysis is made of the factors contributing to this shift. It is found necessary to define two stability factors for an adequate formulation of the bias problem. These factors, together with the voltage and current defining the operating point, are used in the design of bias networks. Various stabilization circuits are considered in detail, and design procedures set up for these schemes. A comparison is made of the various schemes; in particular, direct and feedback stabilization are compared on the basis of battery drain, ac gain, and variation of operating point with battery voltage. The stabilization of direct-coupled stages is also discussed, and the design of a bias circuit for a two-stage direct-coupled pair is taken up in detail. Nonlinear techniques for temperature stabilization are also discussed. These are useful in special applications such as high-power output stages, where the temperature changes are extreme, or in low-level circuits where extremely stable operation is required, e.g., in oscillators.
  • Keywords
    Transistor and solid-state circuits conference papers; Artificial intelligence; Charge carrier processes; Circuit synthesis; Differential equations; Electrons; Nonlinear equations; P-n junctions; Semiconductor diodes; Temperature dependence; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Circuit Theory, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2007
  • Type

    jour

  • DOI
    10.1109/TCT.1957.1086372
  • Filename
    1086372