The Use of Time-Domain Techniques for Microwave Transistor s-Parameter Measurements

The determination of microwave transistor s parameters over a frequency band up to 10 GHz by means of timedomain techniques, involving Fourier analysis and deconvolution of transient response data, is described. Details of the measurement system are presented and advantages of such techniques over conventional network analyzer techniques are discussed. Results obtained for developmental ion-implanted/diffused-silicon bipolar transistors with ft values above 5 GHz are presented.