Efficient Modulation of InP-based 1.3-μm VCSELs with AsSb-based DBRs

Author

Feezell, D. ; Johansson, L.A. ; Buell, D.A. ; Coldren, L.A.

Author_Institution

Dept. of Mater., Univ. of California, Santa Barbara, CA, USA

Volume

17

Issue

11

fYear

2005

Firstpage

2253

Lastpage

2255

Abstract

We demonstrate efficient error-free 3.125-Gb/s modulation of InP-based 1.3-μm vertical-cavity surface-emitting lasers with AsSb-based distributed Bragg reflectors up to 60/spl deg/C. These devices demonstrated high differential efficiencies [>60% at room temperature (RT)], which resulted in a required bias current for modulation of only 5.9 mA. The measured extinction ratios were greater than 8 dB up to 60/spl deg/C with a peak-to-peak drive voltage of only 800 mV. The 3-dB-down RT small-signal bandwidth was 4.4 GHz at a bias of 5.9 mA.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical modulation; quantum well lasers; semiconductor epitaxial layers; surface emitting lasers; 1.3 mum; 293 to 298 K; 3.125 Gbit/s; 4.4 GHz; 5.9 mA; 60 degC; 800 mV; AlGaAsSb-InAlGaAs; AsSb-based DBR; InP; InP-based lasers; VCSEL; distributed Bragg reflectors; error-free modulation; extinction ratios; room temperature; semiconductor lasers; vertical-cavity surface-emitting lasers; Distributed Bragg reflectors; Extinction ratio; Fiber lasers; Optical fiber communication; Optical surface waves; Semiconductor lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Voltage; InP-based; long wavelength; modulation; optical fiber communication; semiconductor laser processing; semiconductor lasers; vertical-cavity surface-emitting lasers (VCSELs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.857216

Filename

1522284