Low temperature crystal growth of MnBi films

Author

Nakada, Masafumi ; Okada, Mitsuya

Author_Institution

Functional Devices Res. Labs., NEC Corp., Kawasaki, Japan

Volume

30

Issue

6

fYear

1994

fDate

11/1/1994 12:00:00 AM

Firstpage

4431

Lastpage

4433

Abstract

The relation between deposition conditions of Bi and Mn layers and crystal growth of MnBi were investigated to reduce the MnBi annealing temperature for its application to a magneto-optical disk. We found that higher c-axis orientation of the hexagonal Bi layer and lower Mn oxide concentration in the Mn layer reduces the annealing temperature. Growth of MnBi below 150°C, which is much lower than the decomposition temperature of photo-polymer (about 200°C), was achieved by optimizing deposition conditions of Bi and Mn layers

Keywords

annealing; bismuth; bismuth alloys; crystal growth; magnetic thin films; manganese; manganese alloys; 150 to 200 C; Mn layer; Mn oxide concentration; Mn-Bi; MnBi; MnBi annealing temperature; MnBi films; annealing temperature; c-axis orientation; decomposition temperature; deposition conditions; hexagonal Bi layer; low temperature crystal growth; magneto-optical disk; photo-polymer; Annealing; Bismuth; Glass; Magnetic anisotropy; Magnetic films; Optical films; Perpendicular magnetic anisotropy; Substrates; Temperature; X-ray diffraction;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.334110

Filename

334110