Integrated MR sensors for automobile

We have developed integrated MR sensors using not only bridge circuits but also an integrating technique with semiconductors. They have four or more elements used for a magnetoelectric transducer. Previously, such kind of integrated magnetic sensors used to have magnetoelectric transducers in the form of a bridge circuit by MR elements only. Hence, the amplitude of the sensor´s output solely depended on the magnetoresistance change ratio of the MR elements. The newly developed MR sensors are 3.7 times more effective than the conventional ones. By means of the NiFe thin film and the specific integrating technique, these new MR sensors show excellent temperature characteristics up to 150°C