Epitaxial growth and magnetic properties of Fe films on Si substrates

Author

Yaegashi, Seiji ; Kurihara, Toshiya ; Sat, Kazuyuki ; Segawa, Hideo

Author_Institution

Mater. Lab., Japan Energy Corp., Toda, Japan

Volume

30

Issue

6

fYear

1994

fDate

11/1/1994 12:00:00 AM

Firstpage

4836

Lastpage

4838

Abstract

Epitaxial growth of Fe films on Si(100), Si(110), and Si(111) substrates was achieved by dc facing targets sputtering. Substrate dc bias was found to be an important parameter to achieve epitaxial growth. Epitaxial films were not obtained without a dc substrate bias except those on Si(111) substrates. In-plane anisotropy energy for Fe(110) plane was different from the bulk. Uniaxial anisotropy and magnetoelastic energy should be considered with magnetocrystalline anisotropy

Keywords

ferromagnetic materials; iron; magnetic anisotropy; magnetic thin films; magnetoelastic effects; metallic epitaxial layers; sputtered coatings; Fe; Fe films on Si substrates; Si; dc facing targets sputtering; epitaxial growth; in-plane anisotropy energy; magnetic properties; magnetocrystalline anisotropy; magnetoelastic energy; uniaxial anisotropy; Anisotropic magnetoresistance; Epitaxial growth; Iron; Magnetic anisotropy; Magnetic films; Magnetic properties; Perpendicular magnetic anisotropy; Semiconductor films; Sputtering; Substrates;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.334238

Filename

334238