Estimation of equivalent circuit parameters for a millimetre-wave GaAs PIN diode switch

Author

Takasu, H.

Author_Institution

Sensoi Syst. Eng. Dept., Toshiba Corp., Kawasaki, Japan

Volume

150

Issue

2

fYear

2003

fDate

4/1/2003 12:00:00 AM

Firstpage

92

Lastpage

94

Abstract

The paper describes a method for the estimation of the equivalent circuit parameters for a millimetre-wave GaAs PIN diode switch. A GaAs PIN diode with low insertion loss over the millimetre-wave region is presented. The diode has been developed by estimating the parasitic resistance of the space between the P⁺-layer and the N⁺-electrode. The design and performance of a broadband single-pole single-throw (SPST) monolithic microwave integrated circuit (MMIC) switch using the GaAs PIN diode developed are also described. An insertion loss of 1.0 dB and isolation of 20 dB were obtained in the range DC to 50 GHz.

Keywords

III-V semiconductors; MIMIC; equivalent circuits; gallium arsenide; microwave switches; millimetre wave diodes; network parameters; p-i-n diodes; semiconductor device models; semiconductor switches; 0 to 50 GHz; 1 dB; EHF; GaAs; GaAs PIN diode switch; MM-wave p-i-n diode switch; broadband MMIC switch; equivalent circuit parameters; estimation method; low insertion loss; millimetre-wave PIN diode switch; monolithic MM-wave integrated circuit; parasitic resistance estimation; single-pole single-throw switch;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:20030335

Filename

1199671