Charge-Based Capacitance Measurement Technique for Nanoscale Devices: Accuracy Assessment Based on TCAD Simulations

Author

Zhao, Hui ; Rustagi, Subhash C. ; Ma, Fa-Jun ; Samudra, Ganesh S. ; Singh, Navab ; Lo, G.Q. ; Kwong, Dim-Lee

Author_Institution

Agency for Sci., Technol. & Res., Inst. of Microelectron., Singapore

Volume

Issue

fYear

2009

fDate

5/1/2009 12:00:00 AM

Firstpage

1157

Lastpage

1160

Abstract

In this brief, we carried out extensive mixed device and circuit-mode simulations to calibrate the charge-based capacitance measurement technique specifically for subfemtofarad nanowire-based device capacitance. The factors that influence the accuracy of the technique were identified.

Keywords

capacitance measurement; nanowires; technology CAD (electronics); TCAD simulations; charge-based capacitance measurement; circuit-mode simulations; extensive mixed device; nanoscale devices; subfemtofarad nanowire-based device capacitance; CMOS technology; Capacitance measurement; Circuit simulation; Current measurement; Laboratories; Microelectronics; Nanoscale devices; Parasitic capacitance; Pulse measurements; Silicon; Charge-based capacitance measurement (CBCM) technique; nanoscale devices; nanowire MOSFETs; sub-femtofarad capacitance measurements; transient TCAD simulations;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2009.2016396

Filename

4804779

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1203979