A semi-analytical approach to the evaluation of threshold voltage in depletion MOS´s with nonuniformly doped substrates

Author

Yu, Zhiqiang ; Zhao, Xiujun

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

Volume

35

Issue

7

fYear

1988

fDate

7/1/1988 12:00:00 AM

Firstpage

993

Lastpage

998

Abstract

D.A. Antoniadis´ algorithm (ibid., vol.ED-31, no.3, p.303-7, 1984) is extended to cover the computation of threshold voltage for depletion or buried-channel MOSFETs. It is shown that a key factor in its evaluation, of the derivative of the integral charge of the mobile minority carriers in the substrate with respect to the gate-source bias, can easily be calculated using the concept of flat-band capacitance. The threshold voltage is thus computed without requiring strict numerical solution of Poisson´s equation, yet the accuracy is very good. This modified algorithm has been implemented in SUPREM III, and good agreement between simulation and experimental results has been achieved

Keywords

electronic engineering computing; insulated gate field effect transistors; semiconductor device models; semiconductor doping; SUPREM III; buried-channel MOSFETs; depletion devices; flat-band capacitance; gate-source bias; integral charge; mobile minority carriers; modified algorithm; nonuniformly doped substrates; simulation; substrate; threshold voltage; Algorithm design and analysis; Capacitance; Computational modeling; Doping profiles; Helium; Impurities; Poisson equations; Semiconductor process modeling; Threshold voltage; Thyristors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.3356

Filename

3356