Performance optimisation of epitaxially regrown 1.3-μm vertical-cavity surface-emitting lasers

Author

Marcks von Wurtemberg, R. ; Yu, Xiaoyuan ; Berggren, Jesper ; Hammar, Mattias

Author_Institution

Dept. of Microelectron. & Appl. Phys., R. Inst. of Technol., Kista

Volume

3

Issue

2

fYear

2009

fDate

4/1/2009 12:00:00 AM

Firstpage

112

Lastpage

121

Abstract

A number of GaAs-based long-wavelength, vertical-cavity, surface-emitting laser structures with optical and electrical confinement based on selective area epitaxy have been fabricated and evaluated. The influence on output power, threshold current, thermal stability and modal properties from design parameters such as bottom-distributed Bragg reflector (DBR) doping, cavity doping, dielectric top DBR design and carrier confinement barriers is evaluated. More than 7 mW of output power is emitted from multimode devices with a square active region size of 10 m. Single-mode power from smaller devices is restricted to 1.5 mW because of a non-optimal cavity shape.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; epitaxial growth; gallium arsenide; laser beams; laser cavity resonators; laser modes; laser stability; optical fabrication; semiconductor doping; semiconductor growth; semiconductor lasers; surface emitting lasers; thermal stability; DBR design; GaAs; carrier confinement barrier; distributed Bragg reflector doping; laser thermal stability; long-wavelength laser fabrication; multimode device; nonoptimal cavity doping; power 1.5 mW; power 7 mW; selective area epitaxial regrowth; single-mode power; size 10 mum; square active region; vertical-cavity surface-emitting laser; wavelength 1.3 mum;

fLanguage

English

Journal_Title

Optoelectronics, IET

Publisher

iet

ISSN

1751-8768

Type

jour

DOI

10.1049/iet-opt.2008.0037

Filename

4804874