• DocumentCode
    1205984
  • Title

    Surface texturing for Maxwell-Wagner polarisation engineering

  • Author

    Prodromakis, Themistoklis ; Papavassiliou, Christos

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Imperial Coll. London, London
  • Volume
    4
  • Issue
    1
  • fYear
    2009
  • fDate
    3/1/2009 12:00:00 AM
  • Firstpage
    5
  • Lastpage
    8
  • Abstract
    Surface texturing techniques that are applied in laminar structures to extend the supported Maxwell-Wagner polarisation are described. The roughness of the semiconductor surface is increased, resulting in a subdivision of the large Si-SiO2 interfaces to a multitude of small interfaces. Measured results demonstrate that this surface texturing has a direct effect on the relaxation of the Maxwell-Wagner polarisation and, in particular, at the interfacial to atomic polarisation transition.
  • Keywords
    elemental semiconductors; interface structure; polarisation; silicon; silicon compounds; surface roughness; surface texture; Maxwell-Wagner polarisation engineering; Si-SiO2; atomic polarisation transition; laminar structures; semiconductor surface roughness; surface texturing;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl:20080049
  • Filename
    4805242
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1205984