• DocumentCode
    1207886
  • Title

    Room temperature electroabsorption in a GexSi1-x PIN photodiode

  • Author

    Murtaza, Suhail ; Mayer, Rob ; Rashed, Mahbub ; Kinosky, David ; Maziar, Christine ; Banerjee, Sanjay ; Tasch, Al F. ; Campbell, Joe C. ; Bean, John C. ; Peticolas, Larry J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
  • Volume
    41
  • Issue
    12
  • fYear
    1994
  • fDate
    12/1/1994 12:00:00 AM
  • Firstpage
    2297
  • Lastpage
    2300
  • Abstract
    We present room temperature electroabsorption measurements in a Ge 0.2Si0.8 pin photodiode. The results appear to be very similar to those reported earlier on GexSi1-x/Si multiple quantum wells
  • Keywords
    Ge-Si alloys; electroabsorption; p-i-n photodiodes; semiconductor materials; GexSi1-x; GeSi; PIN photodiode; intrinsic region; photocurrent; room temperature electroabsorption; Absorption; Artificial intelligence; Conducting materials; PIN photodiodes; Phonons; Photoconductivity; Plasma temperature; Semiconductor materials; Silicon; Temperature measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.337431
  • Filename
    337431
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1207886