A room temperature 0.1 μm CMOS on SOI

Author

Shahidi, Ghavam G. ; Anderson, Carl A. ; Chappell, Barbara A. ; Chappell, Terry I. ; Comfort, James H. ; Davari, Bijan ; Dennard, Robert H. ; Franch, Robert L. ; McFarland, Patricia A. ; Neely, James S. ; Ning, Tak H. ; Polcari, Michael R. ; Warnock, Jame

Author_Institution

Semicond. Res. & Dev. Center, IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

41

Issue

12

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

2405

Lastpage

2412

Abstract

An advanced 0.1 μm CMOS technology on SOI is presented. In order to minimize short channel effects, relatively thick nondepleted (0.15 μm) SOI film, highly nonuniform channel doping and source-drain extension-halo were used. Excellent short channel effects (SCE) down to channel lengths below 0.1 μm were obtained. It is shown that undepleted SOI results in better short channel effect when compared to ultrathin depleted SOI. Devices with little short channel effect all the way to below 500 Å effective channel length were obtained. Furthermore, utilization of source-drain extension-halo minimizes the bipolar effect inherent in the floating body. These devices were applied to a variety of circuits: Very high speeds were obtained: Unloaded delay was 20 ps, unloaded NAND (FI=FO=3) was 64 ps, and loaded NAND (FI=FO=3, C_L=0.3 pF) delay was 130 ps at supply of 1.8 V. This technology was applied to a self-resetting 512 K SRAM. Access times of 2.5 ns at 1.5 V and 3.5 ns at 1.0 V were obtained

Keywords

CMOS integrated circuits; CMOS memory circuits; SRAM chips; integrated circuit technology; silicon-on-insulator; 0.1 micron; 1 to 1.8 V; 2.5 to 3.5 ns; 20 to 130 ps; 512 Kbit; CMOS on SOI; Si; floating body; highly nonuniform channel doping; nondepleted SOI film; room temperature operation; self-resetting SRAM; short channel effects; source-drain extension-halo; undepleted SOI; CMOS technology; Circuits; Delay; Doping; Electric breakdown; MOS devices; Random access memory; System performance; Temperature; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.337456

Filename

337456