DocumentCode
1208152
Title
Si/Si1-xGex valence band discontinuity measurements using a semiconductor-insulator-semiconductor (SIS) heterostructure
Author
Gan, Chock H. ; Alamo, Jesus A. ; Bennett, Brian R. ; Meyerson, Bernard S. ; Crabbe, Emmanuel F. ; Sodini, Charles G. ; Reif, L. Rafael
Author_Institution
MIT, Cambridge, MA, USA
Volume
41
Issue
12
fYear
1994
fDate
12/1/1994 12:00:00 AM
Firstpage
2430
Lastpage
2439
Abstract
We have measured the valence-band discontinuity of strained Si1-xGex on (100) unstrained Si using p-Si1-x Gex/Si/p-Si1-xGex semiconductor-insulator semiconductor (SIS) structures with Ge compositions in the range 10<x<25%. The epitaxial heterostructures were grown by ultra-high-vacuum chemical-vapor-deposition. A new data analysis procedure is proposed for extracting small ΔEυ values out of the current-voltage characteristics of the SIS heterostructures as a function of temperature. Our data indicates that the valence band discontinuity between Si and Si1-xGex can be approximated by ΔEυ=6.4x meV for 0<x<17.5%
Keywords
Ge-Si alloys; interface states; semiconductor materials; semiconductor-insulator-semiconductor structures; silicon; valence bands; vapour phase epitaxial growth; SiGe-Si-SiGe; current-voltage characteristics; data analysis procedure; epitaxial heterostructures; p-Si1-xGex/Si/p-Si1-xGex SIS structures; semiconductor-insulator-semiconductor heterostructure; ultra-high-vacuum chemical-vapor-deposition; valence band discontinuity measurements; Anodes; Cathodes; Chemicals; Data analysis; Data mining; Gallium nitride; Heterojunction bipolar transistors; Photonic band gap; Substrates; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.337460
Filename
337460
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