DocumentCode
1208549
Title
An improved MODFET microwave analysis
Author
Bagheri, Mehran
Author_Institution
Bell Commun. Res. Inc., Red Bank, NJ, USA
Volume
35
Issue
7
fYear
1988
fDate
7/1/1988 12:00:00 AM
Firstpage
1147
Lastpage
1149
Abstract
A recently proposed MODFET analysis is improved by presenting more accurate expressions for the MODFET admittance parameters. It is shown that the resulting parameters can improve the frequency range of validity by a factor of two over those recently presented, and that the latter represent a low-frequency approximation to the parameters given here. An equivalent circuit is presented for the MODFET that is valid up to twice the device cutoff frequency and contains no element with negative values
Keywords
electric admittance; equivalent circuits; high electron mobility transistors; semiconductor device models; solid-state microwave devices; HEMT; MODFET; admittance parameters; equivalent circuit; frequency range; microwave analysis; microwave device; modelling; Admittance; Equivalent circuits; Frequency; HEMTs; Integrated circuit technology; MODFET circuits; MODFET integrated circuits; Microwave technology; Military computing; Space technology;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.3378
Filename
3378
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