• DocumentCode
    1210800
  • Title

    Symmetrically linearised charge-sheet model for extended temperature range

  • Author

    ZHU, Z. Q. ; Gildenblat, Gennady

  • Author_Institution
    Ira A. Fulton Sch. of Eng., Arizona State Univ., Tempe, AZ
  • Volume
    45
  • Issue
    7
  • fYear
    2009
  • Firstpage
    346
  • Lastpage
    348
  • Abstract
    The symmetrically linearised charge-sheet model, which forms the core of the industry standard compact MOSFET model is extended to a wide temperature range by including partial impurity freeze-out. The new model is verified by comparison with the exact results and includes the original formulation as a special case corresponding to complete impurity ionisation.
  • Keywords
    MOSFET; impurity ionisation; industry standard compact MOSFET model; symmetrically linearised charge-sheet model;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.3655
  • Filename
    4807009
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1210800