Accurate determination of thermal resistance of FETs

Author

Darwish, Ali M. ; Bayba, Andrew J. ; Hung, Hingloi Alfred

Author_Institution

Army Res. Lab., Adelphi, MD, USA

Volume

53

Issue

1

fYear

2005

Firstpage

306

Lastpage

313

Abstract

The accurate determination of the channel temperature in field-effect transistors (FETs) and monolithic microwave integrated circuits is critical for reliability. An original accurate closed-form expression is presented for the thermal resistance of multifinger FET structures. The model is based on the solution of Laplace´s equations in prolate spheroidal coordinates and elliptical cylinder coordinates. The model´s validity is verified by comparing the results with finite-element simulations, and experimental observations from liquid-crystal measurements and spatially resolved photoluminescence measurements. Very close agreement is observed in all cases.

Keywords

III-V semiconductors; Laplace equations; MMIC; field effect transistors; gallium arsenide; integrated circuit reliability; photoluminescence; semiconductor device models; semiconductor device reliability; thermal resistance; GaAs; Laplace equations; accurate closed-form expression; channel temperature; elliptical cylinder coordinates; field effect transistors; finite element simulations; liquid crystal measurement; monolithic microwave integrated circuits; multifinger FET structures; reliability; spatially resolved photoluminescence measurements; spheroidal coordinates; thermal resistance; Closed-form solution; Electrical resistance measurement; Integrated circuit reliability; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Monolithic integrated circuits; Temperature; Thermal resistance;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2004.839916

Filename

1381702