DocumentCode
1211529
Title
Comments on "Microwave noise modeling for InP-InGaAs HBTs"
Author
Escotte, Laurent ; Graffeuil, Jacques
Volume
53
Issue
1
fYear
2005
Firstpage
415
Lastpage
416
Abstract
For original article by J. Gao, X. Li, H. Wang and G. Boeck see ibid., vol.52, no.4, p.1624-72, April 2004.
Keywords
III-V semiconductors; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; semiconductor device noise; HBT; InP-InGaAs; microwave noise modeling; small-signal equivalent circuit; Circuit noise; Circuit topology; Differential equations; Electric resistance; Equivalent circuits; Frequency dependence; Heterojunction bipolar transistors; Microwave circuits; Noise figure; Temperature;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2004.839954
Filename
1381720
Link To Document