DocumentCode
1211821
Title
Reliability modeling of capacitive RF MEMS
Author
Mellé, Samuel ; De Conto, David ; Dubuc, David ; Grenier, Katia ; Vendier, Olivier ; Muraro, Jean-Luc ; Cazaux, Jean-Louis ; Plana, Robert
Author_Institution
Lab. d´´Anal. et d´´Archit. des Syst. Meas., Centre Nat. de la Recherche Scientifique, Toulouse, France
Volume
53
Issue
11
fYear
2005
Firstpage
3482
Lastpage
3488
Abstract
The kinetic of dielectric charging in capacitive RF microelectromechanical systems (RF MEMS) is investigated using an original method of stress and monitoring. This effect is investigated through a new parameter: the shift rate of the actuation voltages. We demonstrate that this lifetime parameter has to be considered as a function of the applied voltage normalized by the contact quality between the bridge and the dielectric. We also demonstrate that this phenomenon is related to Frenkel-Poole conduction, which takes place into the dielectric. We finally propose a model that describes the dielectric charging kinetic in capacitive RF MEMS. This model is used to extract a figure-of-merit of capacitive switches lifetime.
Keywords
Poole-Frenkel effect; capacitor switching; dielectric properties; electrostatic devices; life testing; microswitches; radiofrequency integrated circuits; reliability; surface charging; Frenkel-Poole conduction; capacitive RF MEMS; capacitive switches; dielectric charging kinetic; lifetime parameter; monitoring; reliability modeling; stress; Bridge circuits; Dielectrics; Kinetic theory; Monitoring; Radio frequency; Radiofrequency microelectromechanical systems; Space technology; Switches; Testing; Voltage; Dielectric charging; Frenkel–Poole conduction; RF microelectromechanical systems (RF MEMS); figure-of-merit (FOM); reliability;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2005.857109
Filename
1528800
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