Spatial power combining oscillators based on an extended resonance technique

Author

Mortazawi, Amir ; de Leach, B.C.

Author_Institution

Dept. of Electr. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA

Volume

42

Issue

12

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

2222

Lastpage

2228

Abstract

Several spatial power combining oscillators employing an extended resonance technique have been designed and fabricated for the first time on single layer microstrip structures. Power combining efficiency, circuit tolerance to individual device variations and the effect of device failures on circuit performance were studied. Results obtained indicate exceptional circuit tolerance to individual device parameter variations as well as to device failures. The combiners described herein were designed and operated at 8 GHz with effective radiated powers of 0.22 W, 0.64 W and 4.3 W for a two, four and a nine device combiner, respectively

Keywords

MESFET circuits; circuit resonance; equivalent circuits; microstrip circuits; microwave integrated circuits; microwave oscillators; nonlinear network analysis; power combiners; 0.22 to 4.3 W; 8 GHz; Duroid substrates; MIC; SHF; circuit performance; combining efficiency; device failures; device parameter variations tolerance; extended resonance technique; single layer microstrip structures; spatial power combining oscillators; Circuits; Fabry-Perot; Frequency synchronization; Injection-locked oscillators; MESFETs; Microstrip; Microwave devices; Microwave theory and techniques; Phased arrays; Resonance;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.339746

Filename

339746