DocumentCode
1212884
Title
Flat-field approximation: a model for drift region in high-efficiency IMPATTS
Author
Blakey, P.A. ; Culshaw, B. ; Giblin, R.A.
Author_Institution
University College London, Department of Electronic & Electrical Engineering, London, UK
Volume
1
Issue
2
fYear
1977
fDate
1/1/1977 12:00:00 AM
Firstpage
57
Lastpage
61
Abstract
A model for the drift region of high-efficiency IMPATT diodes is described. Results obtained using the model are presented and demonstrate the existence of important drift-region tuning effects.
Keywords
IMPATT diodes; drift region model; flat field approximation; high efficiency IMPATT diodes;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Journal on
Publisher
iet
ISSN
0308-6968
Type
jour
DOI
10.1049/ij-ssed.1977.0005
Filename
4807516
Link To Document