DocumentCode
1213084
Title
Interdiffusion of Cr/Pt/Ag metallisation layers on silicon impatt diodes
Author
Morgan, D.V. ; Howes, M.J. ; Mukherjee, S.D. ; Taylor, D.J. ; Brook, P.
Author_Institution
University of Leeds, Department of Electrical & Electronic Engineering, Leeds, UK
Volume
1
Issue
5
fYear
1977
fDate
9/1/1977 12:00:00 AM
Firstpage
158
Lastpage
160
Abstract
Thermal interdiffusion in the Cr/Pt/Ag metallisation system used for silicon impatt diodes has been characterised using Rutherford backscattering of helium ions. Considerable interdiffusion, characterised by an activation energy of 0¿¿5 eV, is observed in the Pt/Ag thin-film boundary, the Cr/Pt interface is found to be stable up to 400¿¿C with practically no observable diffusion.
Keywords
IMPATT diodes; diffusion in solids; metallisation; particle backscattering; Cr-Pt-Ag metallisation layers; Rutherford backscattering; Si IMPATT diodes; activation energy; thermal interdiffusion;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Journal on
Publisher
iet
ISSN
0308-6968
Type
jour
DOI
10.1049/ij-ssed.1977.0023
Filename
4807537
Link To Document