DocumentCode
1213085
Title
High-Efficiency GaN-Based Light-Emitting Diodes Fabricated With Metallic Hybrid Reflectors
Author
Kim, Hyunsoo ; Lee, Sung-Nam ; Park, YongJo ; Seong, Tae-Yeon
Author_Institution
Opto Syst. Lab., Samsung Electro-Mech. Co., Ltd., Suwon
Volume
29
Issue
6
fYear
2008
fDate
6/1/2008 12:00:00 AM
Firstpage
582
Lastpage
584
Abstract
We report on high-efficiency GaN-based light-emitting diodes (LEDs) fabricated with metallic hybrid reflectors (MHRs). It is shown that the MHRs consisting of an injection part (with low p-contact resistance and intermediate reflectance) and a spreading part (with high p-contact resistance and good reflectance) can enhance current injection and overall light reflectivity. Compared with reference LEDs with single reflectors, LEDs fabricated with Ag-based MHRs give higher output power by 8.9% and a reduction in forward voltage by 0.02 V (at 20 mA), resulting in the improvement of the power efficiency by 10%.
Keywords
III-V semiconductors; contact resistance; gallium compounds; light emitting diodes; wide band gap semiconductors; Ag-based MHRs; GaN; GaN-based light-emitting diode; LED; current injection; light reflectivity; metallic hybrid reflector; p-contact resistance; Electrode; GaN; light-emitting diode (LED);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2008.921392
Filename
4512351
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