• DocumentCode
    1213156
  • Title

    Ga0.8In0.2As/GaAs/Ga0.51In0.49P buried ridge structure single quantum well laser emitting at 0.98 mu m

  • Author

    Mobarhan, K. ; Razeghi, M. ; Blondeau, R.

  • Author_Institution
    Northwestern Univ., Evanston, IL, USA
  • Volume
    28
  • Issue
    16
  • fYear
    1992
  • fDate
    7/30/1992 12:00:00 AM
  • Firstpage
    1510
  • Lastpage
    1511
  • Abstract
    The first fabrication is reported of a buried ridge structure Ga0.8In0.2As/GaAs/Ga0.51In0.49P laser emitting at 0.98 mu m grown by two-step low pressure metal organic chemical vapour deposition. The width of the ridge is 2 mu m. Laser output power greater than 40 mW with a threshold current of 30 mA has been measured. A typical quantum efficiency of eta =60% was obtained without any facet coating. Excellent homogeneity and uniformity have been achieved over a wafer area of 10 cm2.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical waveguides; optical workshop techniques; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 0.98 micron; 30 mA; 40 mW; 60 percent; Ga 0.8In 0.2As-GaAs-Ga 0.51In 0.49P; SQW semiconductor laser; buried ridge structure; fabrication; low pressure MOCVD; metal organic chemical vapour deposition; output power; quantum efficiency; single quantum well laser; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920959
  • Filename
    153215
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1213156