• DocumentCode
    1213226
  • Title

    Degradation studies of sawn-cavity (GaAl) As/GaAs-heterostructure lasers under pulsed operation

  • Author

    Henshall, G.D. ; Hinton, R.E.P.

  • Author_Institution
    Standard Telecommunication Laboratories Limited, Materials and Components Laboratory, Harlow, UK
  • Volume
    2
  • Issue
    1
  • fYear
    1978
  • fDate
    1/1/1978 12:00:00 AM
  • Firstpage
    31
  • Lastpage
    37
  • Abstract
    Rapid degradation sometimes observed in sawn-cavity (GaAl) As/GaAs-heterostructure lasers under pulsed operation has been found to be primarily due to damage introduced during sawing. Dislocation networks are generated, which propagate through the active layer during operation, leading to the growth of nonradiative recombination areas. The degradation rate was found to be superlinearly dependent on current. Lasers fabricated by deep-proton isolation, which introduces no mechanical damage, did not degrade rapidly.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; degradation; nonradiative recombination areas; pulsed operation; sawing; sawn cavity (GaAl)As/GaAs heterostructure lasers;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Journal on
  • Publisher
    iet
  • ISSN
    0308-6968
  • Type

    jour

  • DOI
    10.1049/ij-ssed.1978.0004
  • Filename
    4807550