DocumentCode
1213226
Title
Degradation studies of sawn-cavity (GaAl) As/GaAs-heterostructure lasers under pulsed operation
Author
Henshall, G.D. ; Hinton, R.E.P.
Author_Institution
Standard Telecommunication Laboratories Limited, Materials and Components Laboratory, Harlow, UK
Volume
2
Issue
1
fYear
1978
fDate
1/1/1978 12:00:00 AM
Firstpage
31
Lastpage
37
Abstract
Rapid degradation sometimes observed in sawn-cavity (GaAl) As/GaAs-heterostructure lasers under pulsed operation has been found to be primarily due to damage introduced during sawing. Dislocation networks are generated, which propagate through the active layer during operation, leading to the growth of nonradiative recombination areas. The degradation rate was found to be superlinearly dependent on current. Lasers fabricated by deep-proton isolation, which introduces no mechanical damage, did not degrade rapidly.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; degradation; nonradiative recombination areas; pulsed operation; sawing; sawn cavity (GaAl)As/GaAs heterostructure lasers;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Journal on
Publisher
iet
ISSN
0308-6968
Type
jour
DOI
10.1049/ij-ssed.1978.0004
Filename
4807550
Link To Document