Optical Investigation of Surface Flashover Plasma Across Silicon Stimulated by Pulsed High Voltage in Vacuum Based on ICCD

Optical investigation of flashover phenomena across silicon is performed in vacuum. A pulse waveform of ~0.4/2.5 mus is employed as stimulation source. The p100-type silicon wafers are the samples. The images of flashover growing are recorded by intensified charge couple device, and the corresponding waveforms of voltage and current are given. The results primarily suggest that the flashover across p-type silicon begins with the distortion of electric field at the edge of anode. Injection of minors may play an important role in the formation process of filament current. It is regarded that the plasma produced by ionized desorbed gas will appear at the final stage of surface flashover.