• DocumentCode
    1213345
  • Title

    Multi-quantum-well lasers emitting at 1.55 mu m grown by GSMBE

  • Author

    Perales, A. ; Goldstein, L. ; Fernier, B. ; Starck, C. ; Lievin, J.L. ; Poingt, F. ; Benoit, J.

  • Author_Institution
    Lab. de Marcoussis, France
  • Volume
    25
  • Issue
    20
  • fYear
    1989
  • Firstpage
    1350
  • Lastpage
    1352
  • Abstract
    GaInAs/GaInAsP multi-quantum-well structures emitting at 1.55 mu m have been realised by gas source molecular beam epitaxy (GSMBE) over a large range of growth temperature. Threshold current densities as low as 0.81 kA/cm2 have been obtained. The first BH lasers fabricated by GSMBE from these heterostructures exhibit low threshold current (18 mA) and linear DC light-current characteristics up to 20 mW.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor junction lasers; semiconductor quantum wells; 1.55 micron; 18 mA; 20 mW; BH lasers; GSMBE; GaInAs-GaInAsP; MQW lasers; buried heterostructure; gas source molecular beam epitaxy; growth temperature; heterostructures; linear DC light-current characteristics; multi-quantum-well structures; semiconductors; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890902
  • Filename
    33989
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1213345